[Oral Presentation]A Novel IGBT with Double Buffer Layers for High Temperature Operation

A Novel IGBT with Double Buffer Layers for High Temperature Operation
ID：119 Submission ID：63 View Protection：ATTENDEE Updated Time：2022-10-11 11:12:32 Hits：255 Oral Presentation

Start Time：2022-11-04 08:50 （Asia/Shanghai）

Duration：20min

Session：[E] Power Electronics Technology and Application » [OS2] Oral Session 2

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Abstract
Keywords
Speaker
Qian Zhang
Hunan University

Submission Author
Qian Zhang Hunan University
Kai Xiao China Southern Power Grid Extra High Voltage Power Transmission Company Maintenance Test Center
Jun Wang Hunan University
Gaoqiang Deng Hunan University
Shiwei Liang Hunan University
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